LDMOS with improved breakdown voltage

ABSTRACT

An LDMOS is formed with a field plate over the n −  drift region, coplanar with the gate stack, and having a higher work function than the gate stack. Embodiments include forming a first conductivity type well, having a source, surrounded by a second conductivity type well, having a drain, in a substrate, forming first and second coplanar gate stacks on the substrate over a portion of the first well and a portion of the second well, respectively, and tuning the work functions of the first and second gate stacks to obtain a higher work function for the second gate stack. Other embodiments include forming the first gate stack of a high-k metal gate and the second gate stack of a field plate on a gate oxide layer, forming the first and second gate stacks with different gate electrode materials on a common gate oxide, and forming the gate stacks separated from each other and with different gate dielectric materials.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. application Ser.No. 13/046,313, filed Mar. 11, 2011, the contents of which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to embedded high voltage transistors witha high breakdown voltage. The present disclosure is particularlyapplicable to lateral diffused MOS (LDMOS) transistors.

BACKGROUND

Embedded high voltage (HV) transistors are gaining importance as theneed for both high voltage transistors and low voltage transistors toco-exist on the same chip rises. Applications of embedded HV transistorsinclude automobiles, displays electronics, telecommunications, and powerconverters. One of the common architectures used for HV devices is thelateral diffused MOS (LDMOS) transistor, such as that illustrated inFIG. 1. As shown, shallow trench isolation (STI) regions 101 are formedin an n⁻ region 103 on p-substrate 105. Typically, n⁻ region 103 isformed epitaxially or by well implant. Gate 107 and gate dielectric 109are formed on a p⁻ doped buried body 111 in n⁻ region 103 between twoSTI regions 101. Source (n⁺) 113 and p⁺ region 115 are formed in buriedbody 111 adjacent one STI region 101, and drain (n⁺) 117 is formed in n⁻region 103 adjacent another STI region 101. An inter layer dielectric(ILD) 119 is formed over the entire device. The LDMOS transistor canoperate over a wide range of breakdown voltages (from 6 volt (V) togreater than 50 V). The main challenges for HV transistors are thebreakdown voltage (V_(br)) and the parasitic resistance in the on-state(R_(dson)), which are inversely related. The n⁻ region 103, or n⁻ driftregion, of the LDMOS is employed to increase V_(br) by sustaining alarger depletion width/voltage drop. The drawback of the n⁻ region isthe higher R_(dson) (the sum of the resistances of the source (R_(s))the channel (R_(ch)), the drift (R_(drift)), and the drain (R_(d))) dueto a lower doped drain.

To increase the breakdown voltage of the LDMOS, a field plate 201 or 203has been added as illustrated in FIGS. 2A and 2B, respectively. Thefield plate, i.e. the extended gate 201 or extra gate 203, sits on athicker oxide above the n⁻ epi region 103 and could be shorted to thegate/source, floated, grounded or independently biased. The field platehelps widen the depletion width/reduce the peak electric field at thesurface of the n⁻ drift region, which in turn allows the device tosustain a larger voltage before breakdown occurs. Adverting to FIGS. 3through 5, FIG. 3 schematically illustrates the depletion width near thegate edge for the LDMOS of FIG. 1, without a field plate. FIGS. 4 and 5respectively show schematics of the energy band diagram extractedvertically from the field plate to the drain and the depletion widthnear the gate edge for the LDMOS of FIG. 2B, with a field plate. Asillustrated, the depletion width increases with a field plate, theelectric field is reduced, and the LDMOS has a higher V_(br).Alternatively, for a fixed blocking voltage, the n− epi concentration orthe lateral extended drain (drift region) concentration may beincreased, thereby reducing R_(dson).

A need therefore exists for LDMOS devices exhibiting a high V_(br) whilemaintaining a low R_(sdon), and for enabling methodology.

SUMMARY

An aspect of the present disclosure is a method of fabricating an LDMOSby forming a field plate over the n⁻ drift region, coplanar with thegate stack, and having a higher work function than the gate stack.

Another aspect of the present disclosure is an LDMOS with a field plateover the n⁻ drift region, coplanar with the gate stack, and having ahigher work function than the gate stack.

Additional aspects and other features of the present disclosure will beset forth in the description which follows and in part will be apparentto those having ordinary skill in the art upon examination of thefollowing or may be learned from the practice of the present disclosure.The advantages of the present disclosure may be realized and obtained asparticularly pointed out in the appended claims.

According to the present disclosure, some technical effects may beachieved in part by a method of forming a first well and a second wellsurrounding the first well in a substrate; doping the first well with afirst conductivity type dopant and the second well with a secondconductivity type dopant; forming a source in the first well and a drainin the second well; forming a doped region of the first conductivitytype dopant in the first well, the doped region functioning as a bodycontact to the first well; forming first and second coplanar gate stackson the substrate over a portion of the first well and a portion of thesecond well, respectively; and tuning the work functions of the firstand second gate stacks to obtain a higher work function for the secondgate stack.

Aspects of the present disclosure include tuning the work functions by:forming a high-k dielectric layer and a metal gate as the first gatestack; and forming an oxide layer and a polysilicon or amorphous silicon(a-Si) field plate as the second gate stack. Further aspects includeforming an oxide layer over the portion of the first well and theportion of the second well; forming a polysilicon or an a-Si layer onthe oxide layer; forming an interlayer dielectric on the substratesurrounding the oxide layer and polysilicon or a-Si layer; removing thepolysilicon or a-Si layer and the oxide layer over the first well,forming a cavity over the first well; depositing the high-k dielectricor an oxide layer followed by the high-k dielectric in the cavity; anddepositing a metal on the high-k dielectric. The high-k layer mayinclude a work function tuning layer, just prior to the metal gatedeposition. Another aspect includes forming a p⁺ doped a-Si layer on theoxide layer. An additional aspect includes independently biasing thefield plate.

Other aspects include tuning the work functions by: forming an oxidelayer on the substrate over the portion of the first well and theportion of the second well; and forming a first gate material on theoxide layer over the portion of the first well and a second gatematerial on the oxide layer over the portion of the second well, thesecond gate material having a higher work function than the first gatematerial. Further aspects include forming a polysilicon layer on theentire oxide layer; implanting an n⁺ dopant in the polysilicon over theportion of the first well, to form the first gate material; andimplanting a p⁺ dopant in the polysilicon over the portion of the secondwell, to form the second gate material. Additional aspects includeforming an undoped, n-doped, or p-doped polysilicon layer on the entireoxide layer; and implanting antimony (Sb) in the polysilicon over theportion of the first well, to form the first gate material, the undoped,n-doped, or p-doped polysilicon forming the second gate material.

Another aspect includes tuning the work functions by: forming the firstgate stack with a first dielectric layer and a metal gate, the firstdielectric layer having a first work function; and forming the secondgate stack with a second dielectric layer and a metal gate, the seconddielectric having a second work function different from the first workfunction, and the first gate stack being separated from the second gatestack. Other aspects include forming first and second dummy gate stackson the substrate over the portions of the first well and the secondwell, respectively; forming an interlayer dielectric (ILD) over theentire substrate; removing the first and second dummy gate stacks,forming first and second cavities, respectively; forming the firstdielectric layer or an oxide layer followed by the first dielectriclayer in the first cavity; forming the second dielectric layer or anoxide layer followed by the second dielectric layer in the secondcavity; and forming a metal gate on each of the first and seconddielectric layers. Additional aspects include forming the first andsecond dielectric layers by: depositing the same dielectric layer in thefirst and second cavities; implanting a first dopant in the dielectriclayer in the first cavity; and implanting a second dopant in thedielectric layer in the second cavity, the second dopant being differentfrom the first dopant.

Another aspect of the present disclosure is a device including: asubstrate; a first well and a second well in the substrate, the firstwell being doped with a first conductivity type dopant, the second wellbeing doped with a second conductivity type dopant, and the second wellsurrounding the first well; a source in the first well and a drain inthe second well; a doped region of the first conductivity type dopant inthe first well, the doped region functioning as a body contact to thefirst well; first and second coplanar gate stacks on the substrate, thefirst gate stack being formed on a portion of the first well, and thesecond gate stack being formed on a portion of the second well; whereinthe work function of the second gate stack is higher than the workfunction of the second gate stack.

Aspects include a device including a high-k dielectric layer, or anoxide layer and a high-k dielectric layer, and a metal gate as the firstgate stack; and an oxide layer and a polysilicon or amorphous silicon(a-Si) field plate as the second gate stack. Another aspect includes ap⁺ doped a-Si field plate on the oxide layer. Further aspects include anoxide layer on the substrate over the portion of the first well and theportion of the second well; a first gate material on the oxide layerover the portion of the first well, forming the first gate stack; and asecond gate material, having a higher work function than the first gatematerial, on the oxide layer over the portion of the second well,forming the second gate stack. Other aspects include an n⁺ dopedpolysilicon as the first gate material; and a p⁺ doped polysilicon asthe second gate material. Additional aspects include antimony (Sb) dopedpolysilicon as the first gate material; and undoped polysilicon as thesecond gate material. Further aspects include a first dielectric layer,or an oxide layer and a first dielectric layer, and a metal gate as thefirst gate stack, the first dielectric layer having a first workfunction; and a second dielectric layer, or an oxide layer and a seconddielectric layer, and a metal gate as the second gate stack, the seconddielectric layer having a second work function different from the firstwork function, and the first gate stack being separated from the secondgate stack. Another aspect includes a dielectric layer implanted with afirst dopant as the first dielectric layer; and the same dielectriclayer implanted with a second dopant as the second dielectric layer, thesecond dopant being different from the first dopant.

Another aspect of the present disclosure is a method including: forminga lateral diffused MOS (LDMOS) by: forming a first well and a secondwell in a substrate, the second well surrounding the first well; dopingthe first well with a p-type dopant and the second well with an n-typedopant; forming a source in the first well and a drain in the secondwell; and forming a p-doped region in the first well, the p-doped regionfunctioning as a body contact to the first well; forming a first gatestack on the substrate over a portion of the first well; forming asecond gate stack on the substrate over a portion of the second well,the first and second gate stacks being coplanar and being formed withdifferent gate dielectric layers and/or with different gate electrodes,and the second gate stack having a higher work function than the firstgate stack.

Additional aspects and technical effects of the present disclosure willbecome readily apparent to those skilled in the art from the followingdetailed description wherein embodiments of the present disclosure aredescribed simply by way of illustration of the best mode contemplated tocarry out the present disclosure. As will be realized, the presentdisclosure is capable of other and different embodiments, and itsseveral details are capable of modifications in various obviousrespects, all without departing from the present disclosure.Accordingly, the drawings and description are to be regarded asillustrative in nature, and not as restrictive.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawing and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 schematically illustrates a prior art LDMOS;

FIGS. 2A and 2B schematically illustrate an a prior art LDMOS with afield plate;

FIG. 3 schematically illustrates the depletion width of the LDMOS ofFIG. 1;

FIG. 4 schematically illustrates the energy band of the LDMOS of FIG.2B;

FIG. 5 schematically illustrates the depletion width of the LDMOS ofFIG. 2B;

FIGS. 6A through 6F schematically illustrate a process flow for formingan LDMOS having a metal gate and an adjacent field plate, in accordancewith an exemplary embodiment;

FIG. 7A schematically illustrates the depletion width of an LDMOS asillustrated in FIG. 6F, with a metal gate and an n⁺ field plate;

FIG. 7B schematically illustrates the depletion width of an LDMOS asillustrated in FIG. 6F, with a metal gate and a p⁺ field plate;

FIGS. 8A through 8D schematically illustrate a process flow for formingan LDMOS having dual gate materials on a single oxide, in accordancewith another exemplary embodiment;

FIGS. 9A through 9F schematically illustrate a process flow for formingan LDMOS having dual separated metal gates, in accordance with anotherexemplary embodiment.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of exemplary embodiments. It should be apparent, however,that exemplary embodiments may be practiced without these specificdetails or with an equivalent arrangement. In other instances,well-known structures and devices are shown in block diagram form inorder to avoid unnecessarily obscuring exemplary embodiments. Inaddition, unless otherwise indicated, all numbers expressing quantities,ratios, and numerical properties of ingredients, reaction conditions,and so forth used in the specification and claims are to be understoodas being modified in all instances by the term “about.”

The present disclosure addresses and solves the current problems of lowbreakdown voltage and high parasitic resistance attendant upon formingan LDMOS transistor. In accordance with embodiments of the presentdisclosure, a high-k metal gate electrode is employed for channelcontrol, and a field plate having a high work function is formedcoplanar with the gate electrode, to increase the breakdown voltagewhile maintaining a low parasitic resistance. The field plate widens thedepletion width, which reduces the peak electric field at the surface ofthe n⁻ drift region, which in turn increases the breakdown voltage.

Methodology in accordance with embodiments of the present disclosureincludes forming a first well and a second well in a substrate,disposing the second well surrounding the first well, doping the firstwell with a first-type dopant and the second well with a second-typedopant, forming a source in the first well and a drain in the secondwell, forming a doped region of the first-type dopant in the first well,the doped region functioning as a body contact to the first well,forming first and second coplanar gate stacks on the substrate over aportion of the first well and a portion of the second well,respectively, and tuning the work functions of the first and second gatestacks to obtain a higher work function for the second gate stack.

Still other aspects, features, and technical effects will be readilyapparent to those skilled in this art from the following detaileddescription, wherein preferred embodiments are shown and described,simply by way of illustration of the best mode contemplated. Thedisclosure is capable of other and different embodiments, and itsseveral details are capable of modifications in various obviousrespects. Accordingly, the drawings and description are to be regardedas illustrative in nature, and not as restrictive.

FIGS. 6A through 6F schematically illustrate a process flow for formingan LDMOS having a metal gate and an adjacent field plate, in accordancewith an exemplary embodiment. Adverting to FIG. 6A, n⁻ Epi region (or n⁻well) 601 and p⁻ well 603 are formed between STI regions 605 on a p-typesubstrate 607 by conventional methods.

As illustrated in FIG. 6B, gate oxide 609 is formed to a thickness of 10Å to 300 Å on a portion of p⁻ well 603 and a portion of n⁻ Epi region601. Field plate 611 is formed to a thickness of 200 Å to 2000 Å on gateoxide 609. Field plate 611 may be formed of amorphous silicon (a-Si) andmay be predoped with either an n⁺ or a p⁺ dopant, for example Arsenic(As) or Boron (B). P⁺ doped a-Si has a higher work function, and,therefore, may more effectively reduce the electric field in the n⁻drift region by widening the depletion width and allowing potential todrop across a larger region. Alternatively, field plate 611 may beformed of doped polysilicon. Field plate 611 may be formed, for example,to a width of 300 nm, 50 nm of which may be over n⁻ Epi region 601.However, these dimensions are merely exemplary, as the dimensions dependon technology, product, and design.

A lightly doped drain (LDD) may optionally be formed followed by spacerformation (not shown for illustrative convenience). Source 613 and drain615 may then be formed in p-well 603 and n-well 601, respectively, asillustrated in FIG. 6C. In addition, p⁺ body 617 may be formed in p-well603, which functions as a body contact to the p-well. Rapid thermalanneal (RTA) and source/drain silicidation may be performed byconventional methods.

Adverting to FIG. 6D, an ILD 619, for example SiO₂, is formed over theentire substrate, including field plate 611. Chemical mechanicalpolishing (CMP) is performed to expose the top surface of field plate611. Then, a portion of the field plate gate stack, for example 200 nmto 1000 nm, is removed, leaving gate oxide 609′ and field plate 611′, asillustrated in FIG. 6E.

As illustrated in FIG. 6F, a high-k dielectric 621, for example hafniumsilicon oxynitride (HfSiON) or SiO₂/HfSiON, is deposited in the openingformed by the removal of part of the field plate gate stack.Alternatively, an oxide layer (not shown for illustrative convenience)followed by high-k dielectric 621 may be deposited in the opening. Thehigh-k dielectric 621 alternatively may include an additional workfunction tuning layer, e.g., lanthanum oxide (La₂O₃). Then, a metal gate623 is deposited in the remainder of the opening followed by CMP. Anoxide may be deposited for a thicker effective oxide thickness prior tothe deposition of high-k dielectric 621. After CMP, back end of line(BEOL) processing may proceed.

FIGS. 7A and 7B schematically illustrate the energy band diagramextracted vertically from the field plate to the drain in the LDMOS ofFIG. 6F for n⁺ and p⁺ field plates, respectively. As shown, a higherwork function or p⁺ field plate results in a wider depletion width atthe surface, which permits the device to sustain a higher voltage beforebreakdown.

FIGS. 8A through 8D schematically illustrate a process flow for formingan LDMOS having dual gate materials on a single oxide, in accordancewith another exemplary embodiment, beginning with isolation and wellformation as illustrated in FIG. 6A. Adverting to FIG. 8A, a gate oxide801 and gate electrode 8B are formed on a portion of p⁻ well 603 and aportion of n⁻ Epi region 601. Gate oxide 801 may be formed to athickness of 10 Å to 300 Å, and gate electrode 803 may be formed on gateoxide 801 to a thickness of 200 Å to 2000 Å. Gate electrode 803 may beformed, for example, of polysilicon or a-Si.

As illustrated in FIG. 8B, an n⁺ dopant 805, for example, As orPhosphorus (P), is implanted in a first part of gate electrode 803,forming first gate electrode 807. A p⁺ dopant 809, for example B, isimplanted in the remainder of gate electrode 803, forming second gateelectrode 811. Each implantation may be performed at an angle or bymasking off the portion of gate electrode 803 which is not to receivethe particular dopant. Alternatively, the gate electrode material may bedoped prior to etching the gate and forming the gate stack 801/803.

A lightly doped drain (LDD) may optionally be formed followed by spacerformation (not shown for illustrative convenience). Source 813 and drain815 may then be formed, as well as p⁺ body 817, as illustrated in FIG.8C. Rapid thermal anneal (RTA) and source/drain silicidation may beperformed by conventional methods.

Adverting to FIG. 8D, an ILD 819, for example SiO₂, is formed over theentire substrate. Chemical mechanical polishing (CMP) may be performed,if necessary, and back end of line (BEOL) processing may proceed.

Although gate electrodes 807 and 811 have been described as beingimplanted with n⁺ and p⁺ dopants, respectively, for dual work functions,alternatively a work function tuning implant such as Sb may be utilizedto create a lower work function for 807 and a higher work function for811. Alternatively, entirely different gate electrode materials (withdifferent work functions) may be utilized for gate electrodes 807 and811. For example, gate electrode 807 may be formed of tantalum nitride(TaN) and gate electrode 811 may be formed of titanium nitride (TiN). Inthat case, the first material may be deposited as illustrated in FIG.8A. Then, conventional masking and etching may be performed to remove aportion of gate electrode 803 and to deposit the second electrodematerial (not shown for illustrative convenience). The implantationsteps shown in FIG. 8B may not be necessary if different materials areutilized for gate electrodes 807 and 811.

In accordance with another exemplary embodiment, FIGS. 9A through 9Fschematically illustrate a process flow for forming an LDMOS having dualseparated metal gates, beginning with isolation and well formation asillustrated in FIG. 6A. Adverting to FIG. 9A, two dummy gate stacks, 901and 903, are formed on a portion of p⁻ well 603 and a portion of n⁻ Epiregion 601, respectively. Each dummy gate stack may be formed, forexample, of a SiO₂ dielectric layer and an a-Si gate electrode on thedielectric layer.

A lightly doped drain (LDD) may optionally be formed followed by spacerformation (not shown for illustrative convenience). Source 905 and drain907 may then be formed, as well as p⁺ body 909, as illustrated in FIG.9B. RTA and source/drain silicidation may then be performed byconventional methods.

Adverting to FIG. 9C, an ILD 911, for example SiO₂, is formed over theentire substrate. Chemical mechanical polishing (CMP) is performed toexpose the top surface of the dummy gate stacks.

As illustrated in FIG. 9D, dummy gate stacks 901 and 903 are removed, asin a conventional replacement gate process. Cavities 913 and 915 areformed. A first gate dielectric 917 is then deposited in cavity 913, anda second gate dielectric 919 is deposited in cavity 915, as illustratedin FIG. 9E. Alternatively, each of gate dielectric 917 and gatedielectric 919 may be preceded by an oxide layer (not shown forillustrative convenience). First gate dielectric 917 and second gatedielectric 919 may be formed of different materials, for exampleHfSiON/La₂O₃ for dielectric 917 and HfSiON/TiN/Al/TiN for dielectric919, to establish different work functions for the two dielectrics.Alternatively, the two dielectrics may both be formed of HfO₂, and thendoped differently to create dual work functions.

Adverting to FIG. 9F, a metal is deposited in cavities 913 and 915,forming metal gate electrode 921 and metal field plate 923. CMP is thenperformed, and BEOL processing may proceed.

The embodiments of the present disclosure can achieve several technicaleffects, including channel control and a high breakdown voltage whilemaintaining a low parasitic resistance. The present disclosure enjoysindustrial applicability in any technologies employing embedded highvoltage transistors, such as automobiles, display electronics,telecommunications, and power converters.

In the preceding description, the present disclosure is described withreference to specifically exemplary embodiments thereof. It will,however, be evident that various modifications and changes may be madethereto without departing from the broader spirit and scope of thepresent disclosure, as set forth in the claims. The specification anddrawings are, accordingly, to be regarded as illustrative and not asrestrictive. It is understood that the present disclosure is capable ofusing various other combinations and embodiments and is capable of anychanges or modifications within the scope of the inventive concept asexpressed herein.

What is claimed is:
 1. A device comprising: a substrate; a first welland a second well in the substrate, the first well being doped with afirst conductivity type dopant, the second well being doped with asecond conductivity type dopant, and the second well surrounding thefirst well; a source in the first well and a drain in the second well; adoped region of the first conductivity type dopant in the first well,the doped region functioning as a body contact to the first well; firstand second coplanar gate stacks on the substrate, the first gate stackbeing formed on a portion of the first well, and the second gate stackbeing formed on a portion of the second well, the first gate stack andthe second gate stack being adjacent each other with no interveningstructure; wherein the work function of the second gate stack is higherthan the work function of the first gate stack.
 2. The device accordingto claim 1, comprising: a first oxide layer and a polysilicon oramorphous silicon (a-Si) field plate as the second gate stack; and ahigh-k dielectric layer, or a second oxide and a high-k dielectriclayer, and a metal gate as the first gate stack.
 3. The device accordingto claim 2, comprising a p+ doped a-Si field plate on the first oxidelayer.
 4. The device according to claim 1, comprising: an oxide layer onthe substrate over the portion of the first well and the portion of thesecond well; a first gate material on the oxide layer over the portionof the first well, forming the first gate stack; and a second gatematerial, having a higher work function than the first gate material, onthe oxide layer over the portion of the second well, forming the secondgate stack.
 5. The device according to claim 4, comprising: an n+ dopedamorphous silicon or polysilicon as the first gate material; and a p+doped amorphous silicon or polysilicon as the second gate material. 6.The device according to claim 4, comprising: antimony (Sb) dopedpolysilicon as the first gate material; and undoped polysilicon as thesecond gate material.
 7. The device according to claim 4, comprising:tantalum nitride (TaN) as the first gate material; and titanium nitride(TiN) as the second gate material.
 8. The device according to claim 1,comprising: a first dielectric layer, or a first oxide layer and a firstdielectric layer, and a metal gate as the first gate stack, the firstdielectric layer having a first work function; and a second dielectriclayer, or a second oxide layer and a second dielectric layer, and ametal gate as the second gate stack, the second dielectric layer havinga second work function different from the first work function, and thefirst gate stack being separated from the second gate stack.
 9. Thedevice according to claim 8, comprising: a dielectric layer implantedwith a first dopant as the first dielectric layer; and the samedielectric layer implanted with a second dopant as the second dielectriclayer, the second dopant being different from the first dopant.
 10. Adevice comprising: a substrate; a lateral diffused metal-oxidesemiconductor (LDMOS) formed on the substrate, the LDMOS comprising: afirst well and a second well in the substrate, the first well beingdoped with a first conductivity type dopant, the second well being dopedwith a second conductivity type dopant, and the second well surroundingthe first well; first and second coplanar gate stacks on the substrate,each having a gate dielectric and a gate material on the gatedielectric, the first gate stack being formed on a portion of the firstwell, and the second gate stack being formed on a portion of the secondwell; wherein no portion of the second gate stack is formed on a portionof the first well; and wherein the gate dielectrics and/or the gatematerials of the first and second gate stacks are different and the workfunction of the second gate stack is higher than the work function ofthe first gate stack.
 11. The device according to claim 10, comprising:a first oxide layer and a polysilicon or amorphous silicon (a-Si) fieldplate as the second gate stack; and a high-k dielectric layer, or asecond oxide and a high-k dielectric layer, and a metal gate as thefirst gate stack.
 12. The device according to claim 11, comprising a p+doped a-Si field plate on the first oxide layer.
 13. The deviceaccording to claim 10, comprising: an oxide layer on the substrate overthe portion of the first well and the portion of the second well; afirst gate material on the oxide layer over the portion of the firstwell, forming the first gate stack; and a second gate material, having ahigher work function than the first gate material, on the oxide layerover the portion of the second well, forming the second gate stack. 14.The device according to claim 13, comprising: an n+ doped amorphoussilicon or polysilicon as the first gate material; and a p dopedamorphous silicon or polysilicon as the second gate material.
 15. Thedevice according to claim 13, comprising: antimony (Sb) dopedpolysilicon as the first gate material; and undoped polysilicon as thesecond gate material.
 16. The device according to claim 13, comprising:tantalum nitride (TaN) as the first gate material; and titanium nitride(TiN) as the second gate material.
 17. The device according to claim 10,comprising: a first dielectric layer, or a first oxide layer and a firstdielectric layer, and a metal gate as the first gate stack, the firstdielectric layer having a first work function; and a second dielectriclayer, or a second oxide layer and a second dielectric layer, and ametal gate as the second gate stack, the second dielectric layer havinga second work function different from the first work function, and thefirst gate stack being separated from the second gate stack.
 18. Thedevice according to claim 17, comprising: a dielectric layer implantedwith a first dopant as the first dielectric layer; and the samedielectric layer implanted with a second dopant as the second dielectriclayer, the second dopant being different from the first dopant.
 19. Adevice comprising: a substrate; a first well and a second well in thesubstrate, the first well being doped with a first conductivity typedopant, the second well being doped with a second conductivity typedopant, and the second well surrounding the first well; a source in thefirst well and a drain in the second well; a doped region of the firstconductivity type dopant in the first well, the doped region functioningas a body contact to the first well; first and second coplanar gatestacks on the substrate, the second gate stack being formed of a firstoxide layer and a first gate material of doped polysilicon or amorphoussilicon (a-Si) on a portion of the second well, with no portion of thesecond gate stack being formed on a portion of the first well, and thefirst gate stack being formed of a dielectric layer and a second gatematerial different than the first gate material on a portion of thefirst well; wherein the work function of the second gate stack is higherthan the work function of the first gate stack.
 20. The device accordingto claim 19, wherein the dielectric layer and second gate materialcomprise: a high-k dielectric layer, or a second oxide and a high-kdielectric layer, and a metal gate, or the first oxide layer and a gatematerial having a lower work function than the first gate material, orthe first oxide layer and an n+ doped amorphous silicon or polysilicon.21. The device according to claim 1, wherein no portion of the secondgate stack is formed on a portion of the first well.